Infineon
IPI50R199CPXKSA1
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
MountingThrough Hole
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Technical Specifications
Infineon IPI50R199CPXKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 199mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI50R199CPXKSA1 Datasheet
Download the complete datasheet for Infineon IPI50R199CPXKSA1 to view detailed technical specifications.
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