N-channel power MOSFET with 500V drain-source breakdown voltage and 10A continuous drain current. Features 350mΩ Rds On, 12ns fall time, and 35ns turn-on delay. Operates from -55°C to 150°C with 89W maximum power dissipation. Packaged in a TO-262-3 through-hole configuration, this silicon metal-oxide semiconductor FET is RoHS compliant and halogen-free.
PackageTO-262-3
PolarityN-CHANNEL
Power89W
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Technical Specifications
Infineon IPI50R350CP technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 550V |
| Dual Supply Voltage | 550V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.02nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Rds On Max | 350mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI50R350CP Datasheet
Download the complete datasheet for Infineon IPI50R350CP to view detailed technical specifications.
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