N-channel power MOSFET featuring 500V drain-source breakdown voltage and 9A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 399mΩ Rds On resistance and 83W maximum power dissipation. Designed for through-hole mounting in a TO-262-3 package, it operates within a -55°C to 150°C temperature range and boasts fast switching speeds with a 14ns fall time. RoHS compliant and halogen-free, this component is suitable for demanding power applications.
PackageTO-262-3
PolarityN-CHANNEL
Power83W
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Technical Specifications
Infineon IPI50R399CPXKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 399mR |
| Drain to Source Voltage (Vdss) | 560V |
| Dual Supply Voltage | 560V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 890pF |
| Length | 10.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 399mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
| Width | 4.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI50R399CPXKSA1 Datasheet
Download the complete datasheet for Infineon IPI50R399CPXKSA1 to view detailed technical specifications.
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