N-channel silicon power MOSFET featuring 600V drain-source breakdown voltage and 31A continuous drain current. This metal-oxide semiconductor field-effect transistor offers a low 99mΩ drain-to-source resistance and 255W maximum power dissipation. Designed for through-hole mounting in a TO-262-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 10ns turn-on delay and 5ns fall time.
PackageTO-262-3
PolarityN-CHANNEL
Power255W
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Technical Specifications
Infineon IPI60R099CP technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 99mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 650V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 255W |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 255W |
| Rds On Max | 99mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI60R099CP Datasheet
Download the complete datasheet for Infineon IPI60R099CP to view detailed technical specifications.
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