IPI60R099CPA

Name: IPI60R099CPA Infineon
Brand: Infineon
SKU: IPI60R099CPA

Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

PackageTO-262-3

MountingThrough Hole

PolarityN-CHANNEL

Power255W

Quick Jump:

Infineon IPI60R099CPA technical specifications.

Package/Case	TO-262-3
Continuous Drain Current (ID)	31A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	105mR
Drain to Source Voltage (Vdss)	600V
Gate to Source Voltage (Vgs)	20V
Input Capacitance	2.8nF
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Max Power Dissipation	255W
Mount	Through Hole
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	255W
Rds On Max	105mR
RoHS Compliant	Yes
Series	CoolMOS™
Turn-Off Delay Time	60ns
Turn-On Delay Time	10ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.