The IPI60R125CPXKSA1 is a 600V N-CHANNEL MOSFET with a continuous drain current of 25A and a threshold voltage of 3V. It features a drain to source breakdown voltage of 650V and a drain to source resistance of 125mR. The device operates over a temperature range of -55°C to 150°C and is packaged in a halogen-free TO-262-3 package. The IPI60R125CPXKSA1 is RoHS compliant and is part of the CoolMOS series.
PackageTO-262-3
PolarityN-CHANNEL
Power208W
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Technical Specifications
Infineon IPI60R125CPXKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Rds On Max | 125mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI60R125CPXKSA1 Datasheet
Download the complete datasheet for Infineon IPI60R125CPXKSA1 to view detailed technical specifications.
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