IPI60R165CP

Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

PackageTO-262-3

PolarityN-CHANNEL

Power192W

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Infineon IPI60R165CP technical specifications.

Package/Case	TO-262-3
Continuous Drain Current (ID)	21A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	165mR
Drain to Source Voltage (Vdss)	650V
Fall Time	5ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	2nF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	192W
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	192W
Rds On Max	165mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	CoolMOS™
Threshold Voltage	3V
Turn-Off Delay Time	50ns
Turn-On Delay Time	12ns