IPI60R250CP

Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

PackageTO-262-3

PolarityN-CHANNEL

Power104W

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Infineon IPI60R250CP technical specifications.

Package/Case	TO-262-3
Continuous Drain Current (ID)	12A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	250mR
Drain to Source Voltage (Vdss)	650V
Fall Time	12ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	1.2nF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	104W
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	104W
Rds On Max	250mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	CoolMOS™
Threshold Voltage	3V
Turn-Off Delay Time	110ns
Turn-On Delay Time	40ns