N-channel MOSFET with 650V drain-source voltage and 12A continuous drain current. Features 250mΩ drain-source resistance, 12ns fall time, 40ns turn-on delay, and 110ns turn-off delay. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 104W. Packaged in a TO-262-3 (I2PAK-3) through-hole mount configuration.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPI60R250CPAKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.45mm |
| Input Capacitance | 1.2nF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 250mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 40ns |
| Weight | 0.073511oz |
| Width | 4.52mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI60R250CPAKSA1 Datasheet
Download the complete datasheet for Infineon IPI60R250CPAKSA1 to view detailed technical specifications.
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