N-Channel Power MOSFET featuring 650V drain-to-source breakdown voltage and 8.7A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 420mΩ drain-to-source resistance. Designed for efficient switching, it exhibits a 10ns turn-on delay and 8ns fall time. Packaged in a TO-262-3 configuration, this component operates across a wide temperature range of -55°C to 150°C with a maximum power dissipation of 83.3W. It is RoHS compliant and halogen-free.
PackageTO-262-3
PolarityN-CHANNEL
Power83.3W
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Technical Specifications
Infineon IPI65R420CFD technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 8.7A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 420mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 870pF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83.3W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 83.3W |
| Rds On Max | 420mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 10ns |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI65R420CFD Datasheet
Download the complete datasheet for Infineon IPI65R420CFD to view detailed technical specifications.
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