N-Channel Power MOSFET featuring 40V drain-source voltage and 70A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 6.5mΩ at a gate-source voltage of 10V. Designed for high-power applications, it boasts a maximum power dissipation of 58W and operates across a wide temperature range from -55°C to 175°C. The component is packaged in a TO-262-3 package, measuring 10mm in length, 4.4mm in width, and 9.25mm in height, with fast switching characteristics including a 9ns fall time.
PackageTO-262-3
Power58W
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Technical Specifications
Infineon IPI70N04S406AKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.25mm |
| Input Capacitance | 2.55nF |
| Lead Free | Contains Lead |
| Length | 10mm |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 58W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 58W |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 7ns |
| Turn-On Delay Time | 8ns |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI70N04S406AKSA1 Datasheet
Download the complete datasheet for Infineon IPI70N04S406AKSA1 to view detailed technical specifications.
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