N-channel Power MOSFET featuring 100V drain-source breakdown voltage and 70A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 11.6mΩ on-state resistance and 125W maximum power dissipation. Designed for high-temperature operation up to 175°C, it comes in a TO-262-3 package and is RoHS compliant.
PackageTO-262-3
PolarityN-CHANNEL
Power125W
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Technical Specifications
Infineon IPI70N10S312AKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 11.3mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 4.355nF |
| Lead Free | Contains Lead |
| Length | 10.36mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| On-State Resistance | 11.6mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 11.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 17ns |
| Width | 4.52mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI70N10S312AKSA1 Datasheet
Download the complete datasheet for Infineon IPI70N10S312AKSA1 to view detailed technical specifications.
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