IPI80CN10NG

Power Field-Effect Transistor, 13A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3

PackageTO-262-3

MountingThrough Hole

PolarityN-CHANNEL

Power31W

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Infineon IPI80CN10NG technical specifications.

Package/Case	TO-262-3
Continuous Drain Current (ID)	13A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	80mR
Drain to Source Voltage (Vdss)	100V
Fall Time	3ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	716pF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	31W
Mount	Through Hole
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	31W
Rds On Max	80mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	13ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.