The IPI80N04S4-04 is an N-channel MOSFET from Infineon with a maximum continuous drain current of 80A and a drain to source voltage of 40V. It features a maximum power dissipation of 71W and operates over a temperature range of -55°C to 175°C. The device is packaged in a TO-262-3 package and is compliant with RoHS regulations.
PackageTO-262-3
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Technical Specifications
Infineon IPI80N04S4-04 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.25mm |
| Input Capacitance | 3.44nF |
| Length | 10mm |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Rds On Max | 4.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 9ns |
| Turn-On Delay Time | 10ns |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI80N04S4-04 Datasheet
Download the complete datasheet for Infineon IPI80N04S4-04 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.