N-channel Power MOSFET featuring 40V drain-source voltage and 80A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 4.3mΩ on-state resistance and 71W maximum power dissipation. Designed for high-performance applications, it operates within a wide temperature range of -55°C to 175°C and includes fast switching characteristics with a 7ns turn-on delay and 31ns fall time. Packaged in a TO-262-3 configuration, this RoHS compliant component is halogen-free.
PackageTO-262-3
Power71W
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Technical Specifications
Infineon IPI80N04S4L04AKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.25mm |
| Input Capacitance | 4.69nF |
| Lead Free | Contains Lead |
| Length | 10mm |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| On-State Resistance | 6mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 71W |
| Rds On Max | 4.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 7ns |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI80N04S4L04AKSA1 Datasheet
Download the complete datasheet for Infineon IPI80N04S4L04AKSA1 to view detailed technical specifications.
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