N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 4.8mΩ Rds On resistance and 300W maximum power dissipation. Designed for demanding applications, it operates within a temperature range of -55°C to 175°C and includes fast switching characteristics with turn-on delay of 19ns and fall time of 90ns. Packaged in a TO-262-3 configuration, this component is ideal for power management solutions.
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| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.25mm |
| Input Capacitance | 5.7nF |
| Length | 10mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 4.8mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 19ns |
| Width | 4.4mm |
| RoHS | Not CompliantNo |
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