N-channel power MOSFET featuring 75V drain-source breakdown voltage and 80A continuous drain current. Offers low on-state resistance of 7.4mΩ at 10Vgs, with a maximum power dissipation of 300W. Designed for high-efficiency switching applications, this silicon FET operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-262-3 configuration, it boasts fast switching characteristics with turn-on delay of 26ns and fall time of 30ns.
PackageTO-262-3
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPI80N08S207AKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 7.1mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.25mm |
| Input Capacitance | 4.7nF |
| Lead Free | Contains Lead |
| Length | 10mm |
| Max Dual Supply Voltage | 75V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| On-State Resistance | 7.4mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 7.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 61ns |
| Turn-On Delay Time | 26ns |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI80N08S207AKSA1 Datasheet
Download the complete datasheet for Infineon IPI80N08S207AKSA1 to view detailed technical specifications.
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