N-Channel Power MOSFET featuring 900V drain-source voltage and 11A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 500mΩ Rds(on) and 156W power dissipation. Designed with a 1-element configuration and through-hole termination in a TO-262-3 package, it operates from -55°C to 150°C. Key switching characteristics include a 70ns turn-on delay and 25ns fall time.
PackageTO-262-3
Power156W
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Technical Specifications
Infineon IPI90R500C3XKSA1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 900V |
| Dual Supply Voltage | 900V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 156W |
| Radiation Hardening | No |
| Rds On Max | 500mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 400ns |
| Turn-On Delay Time | 70ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPI90R500C3XKSA1 Datasheet
Download the complete datasheet for Infineon IPI90R500C3XKSA1 to view detailed technical specifications.
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