N-channel Power MOSFET featuring 600V drain-source voltage and 0.065 ohm on-resistance. This single-element, 4-terminal silicon Metal-oxide Semiconductor FET operates from -40°C minimum temperature. Designed for efficient power switching applications.
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Technical Specifications
Infineon IPL60R065P7AUMA1 technical specifications.
General
| Number of Terminals | 4 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPL60R065P7AUMA1 Datasheet
Download the complete datasheet for Infineon IPL60R065P7AUMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.