N-Channel Power MOSFET, 600V breakdown voltage, 33A continuous drain current, and 0.075 ohm on-resistance. This single-element, silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a 4-terminal VSON package, operating from -40°C.
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Technical Specifications
Infineon IPL60R075CFD7AUMA1 technical specifications.
General
| Number of Terminals | 4 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPL60R075CFD7AUMA1 Datasheet
Download the complete datasheet for Infineon IPL60R075CFD7AUMA1 to view detailed technical specifications.
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