N-channel silicon Metal-oxide Semiconductor FET designed for small signal applications. Features a 500V breakdown voltage and a single element configuration. This 3-terminal device offers a minimum operating temperature of -40°C.
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Technical Specifications
Infineon IPN50R3K0CEATMA1 technical specifications.
General
Number of Terminals
3
Min Operating Temperature
-40
Terminal Position
DUAL
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IPN50R3K0CEATMA1 Datasheet
Download the complete datasheet for Infineon IPN50R3K0CEATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.