N-channel power MOSFET featuring 40V drain-source voltage and 90A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 2.3mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C and boasts a maximum power dissipation of 167W. The component is RoHS and REACH SVHC compliant, with halogen-free construction.
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Infineon IPP023N04NGXKSA1 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Resistance | 2.3mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 10nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 167W |
| Rds On Max | 2.3mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 27ns |
| Width | 4.57mm |
| RoHS | Compliant |
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