N-channel Power MOSFET featuring 60V drain-source voltage and 120A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 2.1mΩ drain-source resistance. Designed for through-hole mounting in a TO-220 package, it operates from -55°C to 175°C with a maximum power dissipation of 250W. The component is halogen-free, lead-free, and RoHS compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP024N06N3GXKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Resistance | 2.1mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.65mm |
| Input Capacitance | 23nF |
| Lead Free | Lead Free |
| Length | 10mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 2.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 79ns |
| Turn-On Delay Time | 41ns |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP024N06N3GXKSA1 Datasheet
Download the complete datasheet for Infineon IPP024N06N3GXKSA1 to view detailed technical specifications.
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