The IPP028N08N3GHKSA1 is a N-CHANNEL MOSFET with a continuous drain current rating of 100A and a drain to source voltage of 80V. It features a drain to source resistance of 2.8mR and a gate to source voltage of 20V. The device operates within a temperature range of -55°C to 175°C and is packaged in a TO-220-3 package for through hole mounting. The MOSFET is not RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP028N08N3GHKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 2.8mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | No |
| Turn-Off Delay Time | 86ns |
| Turn-On Delay Time | 28ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon IPP028N08N3GHKSA1 Datasheet
Download the complete datasheet for Infineon IPP028N08N3GHKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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