N-Channel Power MOSFET featuring 100V drain-source voltage and 100A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 3mΩ drain-source resistance. Designed for through-hole mounting in a TO-220 package, it operates from -55°C to 175°C with a maximum power dissipation of 300W. Key electrical characteristics include 28ns fall time, 84ns turn-off delay, and 34ns turn-on delay. This component is RoHS and Halogen Free compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPP030N10N3GXKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 14.8nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 3mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 84ns |
| Turn-On Delay Time | 34ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP030N10N3GXKSA1 Datasheet
Download the complete datasheet for Infineon IPP030N10N3GXKSA1 to view detailed technical specifications.
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