N-channel power MOSFET featuring 80V drain-source breakdown voltage and 100A continuous drain current. This through-hole component offers a low 3.75mΩ drain-source resistance (Rds On) and a maximum power dissipation of 214W. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching characteristics with a 23ns turn-on delay and 45ns turn-off delay. The silicon metal-oxide semiconductor FET is housed in a TO-220AB package and is RoHS compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power214W
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Technical Specifications
Infineon IPP037N08N3GXKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 3.75mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 8.11nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 214W |
| Radiation Hardening | No |
| Rds On Max | 3.75mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.8V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 23ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP037N08N3GXKSA1 Datasheet
Download the complete datasheet for Infineon IPP037N08N3GXKSA1 to view detailed technical specifications.
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