N-channel enhancement mode power MOSFET in a TO-220 package, designed for automotive applications. Features a maximum drain-source voltage of 60V and a continuous drain current of 80A. Offers low on-resistance of 4mΩ at 10V Vgs and a typical gate charge of 38nC. Operates across a wide temperature range from -55°C to 175°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPP040N06N datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPP040N06N technical specifications.
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 9.25 |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 80A |
| Maximum Gate Threshold Voltage | 2.8(Typ)V |
| Maximum Drain Source Resistance | 4@10VmOhm |
| Typical Gate Charge @ Vgs | 38@10VnC |
| Typical Gate Charge @ 10V | 38nC |
| Typical Input Capacitance @ Vds | 2700@30VpF |
| Maximum Power Dissipation | 3000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Infineon IPP040N06N to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
