N-channel Power MOSFET featuring 100V drain-source voltage and 100A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 4.5mΩ Rds On max and 214W power dissipation. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching speeds with a 14ns fall time. Packaged in a TO-220-3 configuration, this RoHS compliant component is designed for high-performance applications.
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Infineon IPP045N10N3GXKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 8.41nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 214W |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.7V |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 27ns |
| Width | 4.57mm |
| RoHS | Compliant |
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