Infineon
IPP05N03LA
Power Field-Effect Transistor, 80A I(D), 25V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
Power Field-Effect Transistor, 80A I(D), 25V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
PackageTO-220-3
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP05N03LA technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 4.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.11nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 94W |
| Rds On Max | 4.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 32ns |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP05N03LA Datasheet
Download the complete datasheet for Infineon IPP05N03LA to view detailed technical specifications.
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