N-channel MOSFET with 100V drain-source breakdown voltage and 100A continuous drain current. Features low 6.2mΩ drain-source on-resistance and 214W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220 through-hole mount with a 500-unit rail/tube quantity. RoHS compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power214W
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Technical Specifications
Infineon IPP06CN10LG technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 6.2mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 11.9nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Through Hole |
| Nominal Vgs | 1.85V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 214W |
| Radiation Hardening | No |
| Rds On Max | 6.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP06CN10LG Datasheet
Download the complete datasheet for Infineon IPP06CN10LG to view detailed technical specifications.
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