N-channel MOSFET with 100V drain-source breakdown voltage and 100A continuous drain current. Features low 6.5mR drain-source resistance (Rds On Max) and 214W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220-3 through-hole mount with a 500-unit rail/tube packaging. RoHS compliant and lead-free.
Infineon IPP06CN10NG technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 100A |
| Current Rating | 100A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 214W |
| Rds On Max | 6.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPP06CN10NG to view detailed technical specifications.
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