N-channel MOSFET with 30V drain-source breakdown voltage and 35A continuous drain current. Features low 9.6mΩ drain-source resistance and 1V threshold voltage. Operates within a -55°C to 175°C temperature range with 42W maximum power dissipation. Packaged in TO-220-3, this RoHS compliant component offers fast switching with 4ns turn-on and 2.6ns fall times.
PackageTO-220-3
PolarityN-CHANNEL
Power42W
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Technical Specifications
Infineon IPP096N03LG technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 1.6nF |
| Length | 10.36mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 9.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 4ns |
| Width | 15.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP096N03LG Datasheet
Download the complete datasheet for Infineon IPP096N03LG to view detailed technical specifications.
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