N-channel silicon power MOSFET with 40V drain-source breakdown voltage and 100A continuous drain current. Features low 3.6mΩ Rds(on) for efficient power handling. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 300W. Packaged in a TO-220-3 configuration, this RoHS and Halogen Free component offers fast switching speeds with turn-on delay of 27ns and fall time of 33ns.
PackageTO-220-3
PolarityN-CHANNEL
Power300W
Quick Jump:
Technical Specifications
Infineon IPP100N04S2-04 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Fall Time
33ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
15.95mm
Input Capacitance
5.3nF
Length
10.36mm
Max Dual Supply Voltage
40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
3.6mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
56ns
Turn-On Delay Time
27ns
Width
4.57mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPP100N04S2-04 Datasheet
Download the complete datasheet for Infineon IPP100N04S2-04 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
