N-channel power MOSFET featuring 55V drain-source breakdown voltage and 100A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 5mΩ Rds On resistance and a maximum power dissipation of 300W. Operating across a wide temperature range from -55°C to 175°C, it includes fast switching characteristics with turn-on delay of 21ns and fall time of 30ns. Packaged in a TO-220AB configuration, this component is designed for high-power applications.
PackageTO-220-3
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPP100N06S205AKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 5.11nF |
| Length | 10.36mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 5mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 59ns |
| Turn-On Delay Time | 21ns |
| Width | 4.57mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon IPP100N06S205AKSA1 Datasheet
Download the complete datasheet for Infineon IPP100N06S205AKSA1 to view detailed technical specifications.
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