N-channel power MOSFET featuring 75V drain-source breakdown voltage and 100A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low on-state resistance of 6.8mΩ. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C and supports a maximum power dissipation of 300W. Key switching characteristics include a 19ns turn-on delay and 22ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power300W
Quick Jump:
Technical Specifications
Infineon IPP100N08S2L07AKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 6.8mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.4nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 75V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| On-State Resistance | 6.8mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 6.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 19ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP100N08S2L07AKSA1 Datasheet
Download the complete datasheet for Infineon IPP100N08S2L07AKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.