N-channel power MOSFET featuring 200V drain-source voltage and 88A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 11mΩ Rds On and 300W maximum power dissipation. Designed for high-performance applications, it operates within a temperature range of -55°C to 175°C and includes fast switching characteristics with an 18ns turn-on delay and 11ns fall time. Packaged in a TO-220-3 configuration, this RoHS compliant component is ideal for demanding power management solutions.
PackageTO-220-3
Voltage200V
Current88A
Power300W
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Technical Specifications
Infineon IPP110N20N3G technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 88A |
| Current | 88A |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 7.1nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 18ns |
| Voltage | 200V |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP110N20N3G Datasheet
Download the complete datasheet for Infineon IPP110N20N3G to view detailed technical specifications.
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