N-Channel Power MOSFET featuring 200V drain-source voltage and 88A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 11mΩ (Rds On Max 10.7mΩ) and a maximum power dissipation of 300W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 18ns turn-on delay and 11ns fall time.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon IPP110N20NAAKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 88A |
| Drain to Source Resistance | 9.9mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 7.1nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| On-State Resistance | 11mR |
| Package Quantity | 500 |
| Rds On Max | 10.7mR |
| RoHS Compliant | Yes |
| Series | OptimWatt™ |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP110N20NAAKSA1 Datasheet
Download the complete datasheet for Infineon IPP110N20NAAKSA1 to view detailed technical specifications.
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