N-channel MOSFET featuring 30V drain-source breakdown voltage and 30A continuous drain current. This OptiMOS™ series component offers a low 11.4mR drain-source resistance and 38W power dissipation. Designed for TO-220-3 packaging, it operates across a wide temperature range from -55°C to 175°C with fast switching times, including a 3.8ns turn-on delay.
PackageTO-220-3
PolarityN-CHANNEL
Power38W
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Technical Specifications
Infineon IPP114N03LG technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 1.5nF |
| Length | 10.36mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38W |
| Rds On Max | 11.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 3.8ns |
| Width | 15.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP114N03LG Datasheet
Download the complete datasheet for Infineon IPP114N03LG to view detailed technical specifications.
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