N-Channel Power MOSFET, 120V Vds, 75A Continuous Drain Current, 11.4mΩ Rds On. Features 136W Max Power Dissipation, 175°C Max Operating Temperature, and TO-220-3 package. This silicon Metal-oxide Semiconductor FET offers fast switching with turn-on delay of 19ns and fall time of 7ns. Halogen and lead-free, RoHS compliant.
PackageTO-220-3
PolarityN-CHANNEL
Power136W
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Technical Specifications
Infineon IPP114N12N3GXKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 120V |
| Drain to Source Resistance | 11.4mR |
| Drain to Source Voltage (Vdss) | 120V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 4.31nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 136W |
| Rds On Max | 11.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 19ns |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP114N12N3GXKSA1 Datasheet
Download the complete datasheet for Infineon IPP114N12N3GXKSA1 to view detailed technical specifications.
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