N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 75A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 12mΩ drain-source resistance (Rds On Max) and 158W power dissipation. Designed for through-hole mounting in a TO-220-3 package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 14ns turn-on delay and 26ns fall time, with an input capacitance of 2.1nF. This RoHS compliant component is supplied in rail/tube packaging.
PackageTO-220-3
Current Rating75A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP120N06NG technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 158W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 158W |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP120N06NG Datasheet
Download the complete datasheet for Infineon IPP120N06NG to view detailed technical specifications.
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