N-channel power MOSFET featuring 60V drain-source voltage and 120A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 2.4mΩ on-state resistance and 250W maximum power dissipation. Designed for high-temperature operation up to 175°C, it includes fast switching characteristics with turn-on delay of 30ns and fall time of 15ns. Packaged in a TO-220AB configuration, this component is RoHS compliant and halogen-free.
PackageTO-220-3
PolarityN-CHANNEL
Power250W
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Technical Specifications
Infineon IPP120N06S4H1AKSA2 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 21.9nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Number of Channels | 1 |
| On-State Resistance | 2.4mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Rds On Max | 2.4mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 30ns |
| Weight | 0.211644oz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP120N06S4H1AKSA2 Datasheet
Download the complete datasheet for Infineon IPP120N06S4H1AKSA2 to view detailed technical specifications.
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