N-Channel Power MOSFET, 80V Vds, 120A continuous drain current, and 2.8mΩ Rds On. Features include 11.55nF input capacitance, 30ns turn-on delay, 60ns turn-off delay, and 50ns fall time. This silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 278W. Packaged in a TO-220-3 through-hole mount, it is RoHS compliant and designed for automotive applications.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Infineon IPP120N08S403AKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 11.55nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 278W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 2.8mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP120N08S403AKSA1 Datasheet
Download the complete datasheet for Infineon IPP120N08S403AKSA1 to view detailed technical specifications.
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