N-Channel Power MOSFET featuring 200V drain-source voltage and 84A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 12mΩ on-state resistance and 300W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 13ns turn-on delay and 8ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPP120N20NFDAKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 84A |
| Drain to Source Resistance | 10.6mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 6.65nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 200V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 12mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.211644oz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP120N20NFDAKSA1 Datasheet
Download the complete datasheet for Infineon IPP120N20NFDAKSA1 to view detailed technical specifications.
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