N-Channel Power MOSFET featuring 100V drain-source voltage and 58A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 12.6mΩ and a maximum power dissipation of 94W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a fall time of 5ns, turn-on delay of 14ns, and turn-off delay of 24ns. This component is RoHS compliant and halogen-free.
PackageTO-220
MountingThrough Hole
Power94W
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Technical Specifications
Infineon IPP126N10N3GXKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Mount | Through Hole |
| Number of Elements | 1 |
| On-State Resistance | 12.6mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 94W |
| Rds On Max | 12.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 14ns |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP126N10N3GXKSA1 Datasheet
Download the complete datasheet for Infineon IPP126N10N3GXKSA1 to view detailed technical specifications.
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