N-channel power MOSFET featuring 100V drain-source breakdown voltage and 67A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 12.9mΩ drain-source resistance (Rds On Max) and 125W power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is lead-free and RoHS compliant. Key switching characteristics include an 8ns fall time and 32ns turn-off delay time.
PackageTO-220-3
Current Rating67A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP12CN10NG technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 67A |
| Current Rating | 67A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 12.9mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.32nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 12.9mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 32ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP12CN10NG Datasheet
Download the complete datasheet for Infineon IPP12CN10NG to view detailed technical specifications.
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