N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 20A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 14.7mΩ Rds On Max and 31W power dissipation. Designed for high-performance applications, it boasts fast switching speeds with a 3.1ns turn-on delay and 2ns fall time. The TO-220-3 package ensures robust thermal management up to 175°C, with RoHS and Halogen Free compliance.
PackageTO-220-3
PolarityN-CHANNEL
Power31W
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Technical Specifications
Infineon IPP147N03LG technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 14.7mR |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 1nF |
| Length | 10.36mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 31W |
| Rds On Max | 14.7mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 3.1ns |
| Width | 15.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP147N03LG Datasheet
Download the complete datasheet for Infineon IPP147N03LG to view detailed technical specifications.
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