N-Channel Power MOSFET, 100V Vdss, 43A Continuous Drain Current, 18mΩ Rds On. Features 1.8nF input capacitance and 2.7V threshold voltage. Operates from -55°C to 175°C with 71W max power dissipation. Packaged in a TO-220-3 configuration, this silicon metal-oxide semiconductor FET is RoHS and Halogen Free compliant.
PackageTO-220-3
Power71W
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Technical Specifications
Infineon IPP180N10N3GXKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 43A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 71W |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.7V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 12ns |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP180N10N3GXKSA1 Datasheet
Download the complete datasheet for Infineon IPP180N10N3GXKSA1 to view detailed technical specifications.
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