N-channel power MOSFET featuring 250V drain-source voltage and 61A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 22mΩ on-state resistance and 19mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-220 package, it boasts a maximum power dissipation of 300W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include an 8ns fall time, 14ns turn-on delay, and 26ns turn-off delay.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Infineon IPP220N25NFDAKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 61A |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 7.076nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 250V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Channels | 1 |
| On-State Resistance | 22mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.211644oz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP220N25NFDAKSA1 Datasheet
Download the complete datasheet for Infineon IPP220N25NFDAKSA1 to view detailed technical specifications.
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