N-channel power MOSFET featuring 500V drain-source breakdown voltage and 23A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 140mΩ on-state resistance and 192W power dissipation. Designed for through-hole mounting in a TO-220-3 package, it operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include an 8ns fall time, 35ns turn-on delay, and 80ns turn-off delay.
PackageTO-220-3
PolarityN-CHANNEL
Power192W
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Technical Specifications
Infineon IPP50R140CPXKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 550V |
| Dual Supply Voltage | 550V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.54nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 192W |
| Nominal Vgs | 3V |
| On-State Resistance | 140mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 192W |
| Rds On Max | 140mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP50R140CPXKSA1 Datasheet
Download the complete datasheet for Infineon IPP50R140CPXKSA1 to view detailed technical specifications.
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