Automotive N-channel Power MOSFET featuring 550V drain-source voltage and 7.6A continuous drain current. This single-element CoolMOS transistor operates in enhancement mode with a 20V gate-source voltage limit. Housed in a 3-pin TO-220 through-hole package with a tab, it offers a maximum drain-source on-resistance of 500 mOhm at 13V. Operating temperature range is -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Infineon IPP50R500CE technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.36(Max) |
| Package Width (mm) | 4.57(Max) |
| Package Height (mm) | 9.45(Max) |
| Seated Plane Height (mm) | 20.75(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | CoolMOS |
| Maximum Drain Source Voltage | 550V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 7.6A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Drain Source Resistance | 500@13VmOhm |
| Typical Gate Charge @ Vgs | 18.7@10VnC |
| Typical Gate Charge @ 10V | 18.7nC |
| Typical Input Capacitance @ Vds | 433@100VpF |
| Maximum Power Dissipation | 57000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPP50R500CE Datasheet
Download the complete datasheet for Infineon IPP50R500CE to view detailed technical specifications.
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